
pl. M. Borna 9
antoni.ciszewski@uwr.edu.pl
tel. +48 71 375 93 10
Zainteresowania
- surface
- general physics
- semiconductor
- photoelectron spectroscopy
- interface
- applied physics
- x ray photoelectron spectroscopy
- gan
- ups
- gan 0001
Dyscyplina naukowa
- nauki fizyczne
Najnowsze publikacje
- Unperturbed inverse kinematics nucleon knockout measurements with a carbon beam
- MnGa and (Mn,Ga)N-like alloy formation during annealing of Mn/GaN(0001) interface
- Interfacial Polarization of Thin Alq3 , Gaq3 , and Erq3 Films on GaN(0001)
- Bands alignment between organic layers of Alq3, Gaq3, Erq3 and graphene on 6H-SiC(0 0 0 1)
- Self‑assembled indium nanostructures formation on InSe (0001) surface
- Scanning tunneling microscopy/spectroscopy study of In/In4Se3(100) nanosystem
- Interactions between PTCDI-C8 and Si(100) Surface
- Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001)
- Interface formation of Al2O3 on carbon enriched 6H-SiC(0001): Photoelectron spectroscopy studies
- Properties of Thin MgO Films on 6H–SiC and GaN: Photoelectron Studies
- InTe surface application as template for indium deposited nanosystem formation
- Quantitative analysis of indium deposited layer formation
mechanism for In/In4Se3 (100) nanosystem - Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template
- Solid state dewetting application for in/(0001) Sb2Te3 nanosystem formation
- Studies of indium nanostructures growth models on A3B6 layered templates
- Indium deposited nanosystems formation on 2D layered chalcogenide crystals’ surfaces
- Interface formation of Al2O3 on n-GaN(0001): Photoelectron spectroscopy studies
- Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment
- Studies of early stages of Mn/GaN(0001) interface formation using surface-sensitive techniques
- Physicochemical properties of the Sb/p-SiC interface